Polprevodniki in polprevodniški elektronski elementi na osnovi grafena

diplomsko delo

Anja Deželak (Author), Matija Tomšič (Mentor)

Abstract

Grafen je bil prvi sintetizirani dvodimenzionalen material in je že ob odkritju pritegnil veliko pozornosti v smislu njegove potencialne aplikacije v elektronskih in fotoničnih napravah. O tem pričajo številne teoretične in druge študije. Vzrok za to so predvsem njegove izjemne mehanske in fizikalno-kemijske lastnosti. Vendar pa pomanjkanje polprevodniških pozitivnih vrzeli v čistem grafenu predstavlja težave pri uporabi v elektroniki. Posledično je veliko pozornosti namenjeno modificiranju grafena z dopiranjem – uvajanjem atomov drugih elementov v čisti grafen – in s tem izboljševanjem polprevodniških lastnosti grafena. V diplomskem delu sem preučila literaturo na temo polprevodnikov in njihovih lastnosti, opisala grafen, sinteze njegovih modificiranih oblik ter opisala uporabo polprevodnikov v diodah in tranzistorjih. Predstavila sem napredek v razvoju diod in tranzistorjev, ki temeljijo na grafenu in njegovih hibridnih sistemih z drugimi materiali. Grafen je obetajoč polprevodniški material, kljub temu pa bodo za njegovo razširjeno uporabo potreben še dodatni razvoj in raziskave.

Keywords

polprevodniki;polprevodniški materiali;dopiran grafen;tranzistor;Schottky dioda;diplomska dela;

Data

Language:	Slovenian
Year of publishing:	2020
Typology:	2.11 - Undergraduate Thesis
Organization:	UL FKKT - Faculty of Chemistry and Chemical Technology
Publisher:	[A. Deželak]
UDC:	621.315.5(043.2)
COBISS:	23537923
Views:	624
Downloads:	186
Average score:	0 (0 votes)
Metadata:

Other data

Secondary language:	English
Secondary title:	Graphene based semiconductors and semiconductor electronic devices
Secondary abstract:	Graphene was the first synthesized two-dimensional material and has attracted a great deal of attention due to its application in electronic and photonic devices. This reflects from many theoretical and other studies of graphene due to its exceptional mechanical and physicochemical properties. However, the lack of positively charged semiconductor holes in pure graphene presents problems for its use in electronics. Consequently, a lot of attention is paid to altering graphene by doping – introducing atoms of other elements into pure graphene – and thus improving the semiconductor properties of graphene. In the present work we review the literature on the properties of graphene as semiconductor and describe the syntheses of modified forms of graphene. In this review we were interested in the use of semiconductors in diodes and transistors, advances in the development of diodes and transistors based on graphene and its hybrid systems with other materials. Graphene is still a promising semiconductor material, but still needs further research and development for its broader use in electronics.
Secondary keywords:	semiconductors;doped graphene;transistor;Schottky diode;
Type (COBISS):	Bachelor thesis/paper
Study programme:	1000373
Embargo end date (OpenAIRE):	1970-01-01
Thesis comment:	Univ. v Ljubljani, Fak. za kemijo in kemijsko tehnologijo, UNI Kemija
Pages:	26 str.
ID:	11890320