doctoral thesis
Luka Pirker (Author), Maja Remškar (Mentor)

Abstract

Substoichiometric tungsten oxides are an interesting class of materials, where defects form periodic structures. These defects are called crystallographic shear (CS) planes and depending on the type of the CS plane and the distance between them, they can form tungsten suboxides with different stoichiometries. In this Thesis quasi-two-dimensional substoichiometric tungsten oxide structures, which nucleate by epitaxial growth on the W$_{19}$O$_{55}$ nanowires and grow as thin platelets, were identified. Both the nanowires and the platelets accommodate oxygen deficiency by formation of crystallographic shear planes. High resolution electron microscopy, x-ray photoelectron spectroscopy and x-ray diffraction were used for structural determination, Raman spectroscopy for vibrational analysis, and optical absorption, Kelvin microscopy and scanning tunnelling spectroscopy for elucidation of electric properties. The used experimental techniques are discussed in the Methods chapter, in the Publication overview chapter an overview of the literature is presented and in the Results and discussion chapter the results are presented and discussed. Stoichiometric phases, W$_{18}$O$_{53}$ (WO$_{2.944}$), W$_{17}$O$_{50}$ (WO$_{2.941}$), W$_{16}$O$_{47}$ (WO$_{2.938}$), W$_{15}$O$_{44}$ (WO$_{2.933}$), W$_{14}$O$_{41}$ (WO$_{2.929}$), W$_{9}$O$_{26}$ (WO$_{2.889}$), and W$_{10}$O$_{29}$ (WO$_{2.9}$), syntactically grow inside a single platelet. Six of the seven identified phases were observed for the first time which were predicted more than 70 years ago. These platelet-like crystals represent a new kind of polycrystallinity, where crystallographic shear planes accommodate oxygen deficiency and at the same time stabilize this multi-stoichiometric structure.

Keywords

nanomateriali;karakterizacija;multistehiometrični kristali;

Data

Language: English
Year of publishing:
Typology: 2.08 - Doctoral Dissertation
Organization: UL FMF - Faculty of Mathematics and Physics
Publisher: [L. Pirker]
UDC: 620.3(043.3)
COBISS: 31357955 Link will open in a new window
Views: 463
Downloads: 172
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Other data

Secondary language: Slovenian
Secondary title: Električne, optične in strukturne lastnosti nizko-dimenzionalnih materialov na osnovi volframa
Secondary abstract: Podstehiometrični volframovi oksidi predstavljajo zanimivo vrsto materialov, kjer se defekti uredijo v periodične strukture. Omenjenim periodičnim strukturam pravimo kristalografske strižne ravnine. Glede na tip kristalografske strižne ravnine in razdalje med njimi, te lahko tvorijo volframove okside z različnimi stehiometrijami. V sklopu disertacije so bili identificirani kvazi dvodimenzionalni podstehiometrični volframovi oksidi, ki epitaksialno rastejo na nanožicah W$_{19}$O$_{55}$ kot tanke ploščice. Tako nanožice kot ploščice odpravljajo pomanjkanje kisika s tvorbo kristalografskih strižnih ravnin. Transmisijska elektronska mikroskopija, rentgenska fotoelektronska spektroskopija in rentgenska praškovna difrakcija so bile uporabljene za določitev strukture, Ramanska spektroskopija za analizo nihajnih načinov snovi, UV-Vis spektroskopija, Kelvinova tipalna mikroskopija in vrstična tunelska mikroskopija za določitev električnih lastnosti. Uporabljene metode so predstavljene v poglavju Metode. V poglavju Publikacije so predstavljena zadnja dognanja v literaturi glede omenjenih materialov, v poglavju Rezultati in diskusija pa so predstavljeni rezultati skupaj z diskusijo. Stehiometrične faze, W$_{18}$O$_{53}$ (WO$_{2.944}$), W$_{17}$O$_{50}$ (WO$_{2.941}$), W$_{16}$O$_{47}$ (WO$_{2.938}$), W$_{15}$O$_{44}$ (WO$_{2.933}$), W$_{14}$O$_{41}$ (WO$_{2.929}$), W$_{9}$O$_{26}$ (WO$_{2.889}$) in W$_{10}$O$_{29}$ (WO$_{2.9}$) sintaktično rastejo znotraj ene same ploščice. Šest od sedmih stehiometrij je bilo prvič eksperimentalno opaženih, čeprav so bile predvidene že pred skoraj 70 leti. Ploščicam podobni kristali predstavljajo novo vrsto polikristaliničnosti, kjer kristalografske strižne ravnine odpravljajo pomanjkanje kisika in hkrati stabilizirajo to več stehiometrično strukturo.
Secondary keywords: Volframovi oksidi;Disertacije;
Type (COBISS): Doctoral dissertation
Study programme: 0
Thesis comment: Univ. v Ljubljani, Fak. za matematiko in fiziko, Oddelek za fiziko
Pages: 95 str.
ID: 12074673