Zipporah Rini Benher (Author), Sandra Gardonio (Author), Mattia Fanetti (Author), Paolo Moras (Author), Asish K. Kundu (Author), Chiara Bigi (Author), Matjaž Valant (Author)

Abstract

We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.

Keywords

topological insulator;quasi-binary Bi2Se3-Bi2S3 system;electronic properties;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 620.1/.2
COBISS: 57602051 Link will open in a new window
ISSN: 2050-7526
Views: 1465
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Other data

URN: URN:SI:UNG
Pages: str. 3058-3064
Volume: ǂVol. ǂ9
Issue: ǂno. ǂ9
Chronology: 2021
DOI: 10.1039/D0TC05121G
ID: 12704972
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