Jie Fu (Author), Zeyu Fan (Author), Mamiko Nakabayashi (Author), Huanxin Ju (Author), N. Pastukhova (Author), Yequan Xiao (Author), Chao Feng (Author), Naoya Shibata (Author), Kazunari Domen (Author), Yanbo Li (Author)

Abstract

Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta3N5 thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top interfaces of Ta3N5 thin film photoanode is still lacking. Here, we employ n-type In:GaN and p-type Mg:GaN to modify the bottom and top interfaces of Ta3N5 thin film photoanode, respectively. The obtained In:GaN/Ta3N5/Mg:GaN heterojunction photoanode shows enhanced bulk carrier separation capability and better injection efficiency at photo- anode/electrolyte interface, which lead to a record-high applied bias photon-to-current efficiency of 3.46% for Ta3N5-based photoanode. Furthermore, the roles of the In:GaN and Mg:GaN layers are distinguished through mechanistic studies. While the In:GaN layer con- tributes mainly to the enhanced bulk charge separation efficiency, the Mg:GaN layer improves the surface charge inject efficiency. This work demonstrates the crucial role of proper interface engineering for thin film-based photoanode in achieving efficient PEC water splitting.

Keywords

photocatalysis;renewable energy;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 54
COBISS: 96773379 Link will open in a new window
ISSN: 2041-1723
Views: 966
Downloads: 68
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Other data

URN: URN:SI:UNG
Pages: str. 1-9
Issue: ǂVol. ǂ13
Chronology: 2022
DOI: 10.1038/s41467-022-28415-4
ID: 14486929