magistrsko delo
Abstract
V tej magistrski nalogi so raziskani vplivi substrata in litografskih postopkov na vzorce 1T-TaS$_2$, ki je znan po svojem bogatem faznem diagramu z več fazami vala gostote naboja in skritim metastabilnim stanjem. Preučili smo, kako različne metode izdelave vplivajo na lastnosti vzorcev, z namenom zmanjšanja neželenih učinkov, povezanih z izdelavo. Poleg tega smo predstavili alternativne metode priprave vzorcev 1T-TaS$_2$, ki omogočajo, da so transportne lastnosti materiala izražene brez dodatnih modifikacij zaradi načina izdelave. Z izboljšanimi tehnikami izdelave smo analizirali obnašanje materiala 1T-TaS$_2$ ob zmanjšanju debeline vzorca in ugotovili, ali so rezultati skladni s prejšnjimi opažanji. Poleg tega smo preučevali, kako isti dejavniki vplivajo na skrito metastabilno stanje. Bolj stabilno metastabilno stanje ima pomembne praktične implikacije, saj bi tako 1T-TaS$_2$ lahko bil bližje praktični uporabi, na primer kot memristor.
Keywords
fizika trdne snovi;tantalov disulfid;val gostote naboja;metastabilno stanje;litografija;prosto stoječi vzorci;memristor;
Data
Language: |
Slovenian |
Year of publishing: |
2024 |
Typology: |
2.09 - Master's Thesis |
Organization: |
UL FMF - Faculty of Mathematics and Physics |
Publisher: |
[M. Rupnik] |
UDC: |
538.9 |
COBISS: |
207496451
|
Views: |
46 |
Downloads: |
14 |
Average score: |
0 (0 votes) |
Metadata: |
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Other data
Secondary language: |
English |
Secondary title: |
Fabrication of advanced 1T-TaS$_2$ electronic devices |
Secondary abstract: |
This master's thesis explores the effects of substrates and lithographic processes on 1T-TaS$_2$ samples, known for their complex phase diagram with multiple charge density wave phases and a hidden metastable state. We investigated how different fabrication methods influence sample properties, aiming to reduce unwanted effects arising from the fabrication process. Furthermore, we introduced alternative preparation methods for 1T-TaS$_2$ samples, ensuring that the material's transport properties are showcased without additional modifications due to the fabrication technique. With these improved methods, we analyzed how 1T-TaS$_2$ behaves when reducing sample thickness and whether the outcomes align with previous findings. Additionally, we examined how same factor aslo impact the hidden metastable state. A more stable metastable state could have substantial practical implications, potentially bringing 1T-TaS$_2$ closer to practical uses, such as in memristors. |
Secondary keywords: |
solid state physics;tantalum disulfide;charge density wave;metastable state;lithography;free-standing samples;memristor; |
Type (COBISS): |
Master's thesis/paper |
Study programme: |
0 |
Thesis comment: |
Univ. v Ljubljani, Fak. za matematiko in fiziko, Oddelek za fiziko |
Pages: |
53 str. |
ID: |
25050661 |