Upgrading of g-C [sub] 3N [sub] 4 semiconductor by a Nitrogen-doped carbon material
ǂa ǂphotocatalytic degradation application
Abstract
Upgrading of ▫$g-C_3N_4$▫ semiconductor by a Nitrogen-doped carbon material
Keywords
kemijska tehnologija;fotokatalizatorji;raman;spektroskopija;materiali;
Data
| Language: | English |
|---|---|
| Year of publishing: | 2023 |
| Typology: | 1.01 - Original Scientific Article |
| Organization: | KI - National Institute of Chemistry |
| UDC: | 66 |
| COBISS: |
241696771
|
| ISSN: | 2213-3437 |
| Views: | 346 |
| Downloads: | 202 |
| Average score: | 0 (0 votes) |
| Metadata: |
|
Other data
| Secondary language: | Slovenian |
|---|---|
| Secondary keywords: | kemijska tehnologija;fotokatalizatorji;raman;spektroskopija;materiali; |
| Embargo end date (OpenAIRE): | 2025-04-01 |
| Source comment: | Nasl. z nasl. zaslona; Opis vira z dne 8. 7. 2025; |
| Pages: | str. 1-13 |
| Volume: | ǂVol. ǂ11 |
| Issue: | ǂiss. ǂ5, [article no.] 109381 |
| Chronology: | Apr. 2023 |
| DOI: | 10.1016/j.jece.2023.109381 |
| ID: | 26862100 |
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