Rok Pajer (Author), Miro Milanovič (Author), Branko Premzel (Author), Miran Rodič (Author)

Abstract

This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advantages. There is no need for additional circuit elements within high current paths, causing parasitic inductances and increased production complexity. The temperature dependence of MOS-FETs conductive resistance RDS−ON is considered in order to achieve the appropriate measurement accuracy. The “MOS-FET sensor” is also accompanied by a signal acquisition electronics circuit with an appropriate frequency bandwidth. The obtained analogue signal is therefore interposed to an A-D converter for further data acquisition. In order to achieve sufficient accuracy, a temperature compensation and appropriate approximation is used (RDS−ON = RDS−ON(Vj)). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407.

Keywords

močnostna elektronika;pretvorniki;MOS-FET;tekoče meritve;power electronics;converters;current measurement;thermal model;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UM FERI - Faculty of Electrical Engineering and Computer Science
UDC: 681.5
COBISS: 18853910 Link will open in a new window
ISSN: 1424-8220
Views: 925
Downloads: 317
Average score: 0 (0 votes)
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Other data

Secondary language: Slovenian
Secondary keywords: močnostna elektronika;pretvorniki;MOS-FET;tekoče meritve;
URN: URN:SI:UM:
Type (COBISS): Scientific work
Pages: str. 18061-18079
Volume: ǂVol. ǂ15
Issue: ǂno. ǂ8
Chronology: 2015
DOI: 10.3390/s150818061
ID: 9142711