S. Mathias (Author), S. Eich (Author), Jurij Urbančič (Author), S. Michael (Author), A. V. Carr (Author), S. Emmerich (Author), A. Stange (Author), T. Popmintchev (Author), T. Rohwer (Author), M. Wiesenmayer (Author)

Abstract

Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe 2 , our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation. Self-amplified photo-induced gap quenching in a correlated electron material. Available from: https://www.researchgate.net/publication/308804379_Self-amplified_photo-induced_gap_quenching_in_a_correlated_electron_material [accessed Apr 20, 2017].

Keywords

high harmonic generation;charge-density wave materials;non-equilibrium electron dynamics;ultrafast surface science;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 53
COBISS: 4770043 Link will open in a new window
ISSN: 2041-1723
Views: 4720
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Other data

URN: URN:SI:UNG
Type (COBISS): Not categorized
Pages: str. 1-8
Issue: ǂVol. ǂ7
Chronology: Oct. 2016
DOI: 10.1038/ncomms12902
ID: 9603396