Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 system
Povzetek
We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.
Ključne besede
topological insulator;quasi-binary Bi2Se3-Bi2S3 system;electronic properties;
Podatki
| Jezik: | Angleški jezik |
|---|---|
| Leto izida: | 2021 |
| Tipologija: | 1.01 - Izvirni znanstveni članek |
| Organizacija: | UNG - Univerza v Novi Gorici |
| UDK: | 620.1/.2 |
| COBISS: |
57602051
|
| ISSN: | 2050-7526 |
| Št. ogledov: | 1465 |
| Št. prenosov: | 0 |
| Ocena: | 0 (0 glasov) |
| Metapodatki: |
|
Ostali podatki
| URN: | URN:SI:UNG |
|---|---|
| Strani: | str. 3058-3064 |
| Letnik: | ǂVol. ǂ9 |
| Zvezek: | ǂno. ǂ9 |
| Čas izdaje: | 2021 |
| DOI: | 10.1039/D0TC05121G |
| ID: | 12704972 |
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