Amid Ranjkesh Siahkal (Author), Milan Ambrožič (Author), Samo Kralj (Author), T. J. Sluckin (Author)

Abstract

We studied numerically external field induced memory effects in randomly perturbed nematic liquid crystals. Random anisotropy nematic-type lattice model was used. The impurities imposing orientational disorder were randomly spatially distributed with the concentration p below the percolation threshold. Simulations were carried for finite temperatures, where we varied p, interaction strength between LC molecules, and impurities and external field B. In the {B, T} plane we determined lines separating short range—quasi long range and quasi long range—long range order. Furthermore, crossover regime separating external field and random field dominated regime was estimated. We calculated remanent nematic ordering in samples at B = 0 as a function of the previously experienced external field strength B.

Keywords

tekoči kristali;topološki defekti;naključni nered;liquid crystal;topological defects;random disorder;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UM FNM - Faculty of Natural Sciences and Mathematics
UDC: 532.783
COBISS: 21004552 Link will open in a new window
ISSN: 1687-8108
Views: 753
Downloads: 298
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Other data

Secondary language: Slovenian
Secondary keywords: tekoči kristali;topološki defekti;naključni nered;
URN: URN:SI:UM:
Type (COBISS): Scientific work
Pages: str. 423693-1-423693-10
Volume: ǂVol. ǂ2014
Chronology: 2014
DOI: 10.1155/2014/423693
ID: 10842679