Amid Ranjkesh Siahkal (Avtor), Milan Ambrožič (Avtor), Samo Kralj (Avtor), T. J. Sluckin (Avtor)

Povzetek

We studied numerically external field induced memory effects in randomly perturbed nematic liquid crystals. Random anisotropy nematic-type lattice model was used. The impurities imposing orientational disorder were randomly spatially distributed with the concentration p below the percolation threshold. Simulations were carried for finite temperatures, where we varied p, interaction strength between LC molecules, and impurities and external field B. In the {B, T} plane we determined lines separating short range—quasi long range and quasi long range—long range order. Furthermore, crossover regime separating external field and random field dominated regime was estimated. We calculated remanent nematic ordering in samples at B = 0 as a function of the previously experienced external field strength B.

Ključne besede

tekoči kristali;topološki defekti;naključni nered;liquid crystal;topological defects;random disorder;

Podatki

Jezik: Angleški jezik
Leto izida:
Tipologija: 1.01 - Izvirni znanstveni članek
Organizacija: UM FNM - Fakulteta za naravoslovje in matematiko
UDK: 532.783
COBISS: 21004552 Povezava se bo odprla v novem oknu
ISSN: 1687-8108
Št. ogledov: 753
Št. prenosov: 298
Ocena: 0 (0 glasov)
Metapodatki: JSON JSON-RDF JSON-LD TURTLE N-TRIPLES XML RDFA MICRODATA DC-XML DC-RDF RDF

Ostali podatki

Sekundarni jezik: Slovenski jezik
Sekundarne ključne besede: tekoči kristali;topološki defekti;naključni nered;
URN: URN:SI:UM:
Vrsta dela (COBISS): Znanstveno delo
Strani: str. 423693-1-423693-10
Letnik: ǂVol. ǂ2014
Čas izdaje: 2014
DOI: 10.1155/2014/423693
ID: 10842679