M. Naeem Sial (Author), Andraž Mavrič (Author), Matjaž Valant (Author)

Abstract

Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.

Keywords

transition metal dichalcogenides;2D materials;seed promotor;chemical vapor deposition;molybdenum diselenide;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 53
COBISS: 5190139 Link will open in a new window
ISSN: 1466-8033
Views: 3071
Downloads: 10
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Other data

URN: URN:SI:UNG
Type (COBISS): Not categorized
Pages: str. 4867-4874
Volume: ǂVol. ǂ20
Issue: ǂiss. ǂ33
Chronology: 2018
DOI: 10.1039/C8CE00917A
ID: 10954211