M. Naeem Sial (Avtor), Andraž Mavrič (Avtor), Matjaž Valant (Avtor)

Povzetek

Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.

Ključne besede

transition metal dichalcogenides;2D materials;seed promotor;chemical vapor deposition;molybdenum diselenide;

Podatki

Jezik: Angleški jezik
Leto izida:
Tipologija: 1.01 - Izvirni znanstveni članek
Organizacija: UNG - Univerza v Novi Gorici
UDK: 53
COBISS: 5190139 Povezava se bo odprla v novem oknu
ISSN: 1466-8033
Št. ogledov: 3071
Št. prenosov: 10
Ocena: 0 (0 glasov)
Metapodatki: JSON JSON-RDF JSON-LD TURTLE N-TRIPLES XML RDFA MICRODATA DC-XML DC-RDF RDF

Ostali podatki

URN: URN:SI:UNG
Vrsta dela (COBISS): Delo ni kategorizirano
Strani: str. 4867-4874
Letnik: ǂVol. ǂ20
Zvezek: ǂiss. ǂ33
Čas izdaje: 2018
DOI: 10.1039/C8CE00917A
ID: 10954211