A. Bosio (Author), Roberta Ciprian (Author), A. Lamperti (Author), I. Rago (Author), Barbara Ressel (Author), G. Rosa (Author), Matija Stupar (Author), E. Weschke (Author)

Abstract

Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray

Keywords

solar cells;CdTe;ZnTe:Cu back contact;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 53
COBISS: 5273595 Link will open in a new window
ISSN: 0038-092X
Views: 3108
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Other data

Secondary language: English
Secondary title: Interface phenomena between CdTe and ZnTe: Cu back contact
Secondary abstract: Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Secondary keywords: solar cells;CdTe;ZnTe:Cu back contact;
URN: URN:SI:UNG
Type (COBISS): Not categorized
Pages: str. 186-193
Issue: ǂVol. ǂ176
Chronology: 2018
DOI: 10.1016/j.solener.2018.10.035
ID: 10989904