Schottkyjeva bariera

moderni pogledi na star problem

Dean Korošak (Author), Bruno Cvikl (Author)

Abstract

V drugem delu prispevka opisujemo transportne lastnosti stika kovine in polprevodnika. V začetku je podan pregledni opis različnih mehanizmov prenosa naboja v idealni Schottkyjevi diodi. V nadaljevanju je opisan transport naboja v neidealnem stiku z vmesno kontrolno plastjo, ki nastane pri nanašanju z metodo CIS. Dodatni transport naboja v takšnih Schottkyjevih heterostrukturah lahko povzroči kontinuum elektronskih stanj, ki se pojavi na meji med urejenim in neurejenim delom polprevodnika. Opisan je vpliv takšnega transporta naboja na tokovno karakteristiko diode.

Keywords

vakuumska tehnika;površine;kovine;polprevodniki;tanke plasti;curek ioniziranih skupkov;

Data

Language:	Slovenian
Year of publishing:	1998
Typology:	1.02 - Review Article
Organization:	UM FS - Faculty of Mechanical Engineering
Publisher:	Društvo za vakuumsko tehniko Slovenije
UDC:	539.2
COBISS:	4173078
ISSN:	0351-9716
Parent publication:	Vakuumist
Views:	1167
Downloads:	27
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Metadata:

Other data

Secondary language:	English
Secondary title:	Schottky barrier - modern views on an old problem (Part II)
Secondary abstract:	In the second part of the paper the transport mechanisms of the metal-semiconductor contact are discussed. An overview of the basic transport mechanism contributing to the current density through the ideal Schottky structure is given. An existance of possible additional charge transport mechanism due to the presence of the disordered interfacial control layer in the ICB deposited Schottky heterostrutures is further discussed. The influence of such a transport mechanism on the current-voltage characteristic is described.
Secondary keywords:	vacuum techniques;surfaces;metals;semiconductors;thin layers;CIS;
URN:	URN:NBN:SI
Type (COBISS):	Not categorized
Pages:	str. 13-16
Volume:	18
Issue:	ǂšt. ǂ3
Chronology:	1998
ID:	1752236