Schottkyjeva bariera

moderni pogledi na star problem

Dean Korošak (Author), Bruno Cvikl (Author)

Abstract

The description of the metal semiconductor contact in the framework of the general model incorporating the interfacial control layer between the metal and the ordered semiconductor is given. Special attention is given to the iCB Schottky structures for nonzero acceleration voltage featuring the disordered interfacial control layer characterized by the metal atoms incorporated into the semiconductor lattice and the DIGS continuum. The expression for the Schottky barrier height variation in ICB structures is given.

Keywords

površine;kovine;polprevodniki;tanke plasti;

Data

Language:	Slovenian
Year of publishing:	1998
Typology:	1.02 - Review Article
Organization:	IJS - Jožef Stefan Institute
Publisher:	Društvo za vakuumsko tehniko Slovenije
UDC:	539.2
COBISS:	13500967
ISSN:	0351-9716
Parent publication:	Vakuumist
Views:	862
Downloads:	37
Average score:	0 (0 votes)
Metadata:

Other data

Secondary language:	English
Secondary title:	Schottky barrier - modern views on an old problem (Part I)
Secondary abstract:	V prispevku je podan opis stika med kovino in polprevodnikom v okviru splošnega modela stika z vmesno kontrolno plastjo. Posebej so poudarjene lastnosti stika, narejenega po metodi CIS, kjer pride do nastanka neurejene kontrolne plasti, karakterizirane s kovinskimi atomi, vgrajenimi v kristalno mrežo polprevodnika in kontinuumom lokaliziranih elektronskih stanj, induciranih z neredom v kontrolni plasti. Podan je izraz za variacijo višine Schottkyjeve bariere v CIS-kontaktih.
URN:	URN:NBN:SI
Type (COBISS):	Not categorized
Pages:	str. 17-20
Volume:	ǂlet. ǂ18
Issue:	ǂšt. ǂ2
Chronology:	1998
ID:	1752368