diplomsko delo
Filip Bačič (Author), Marjan Marinšek (Mentor)

Abstract

Polprevodniški materiali so eden izmed najpomembnejših razredov materialov, saj na njih temelji skoraj celotna sodobna elektronika. Kar jih naredi tako posebne, je njihova sposobnost, da selektivno prevajajo električni tok, glede na napetost ali temperaturo, ki so ji izpostavljeni. Poznanih materialov je po skoraj stoletju razvoja izjemno dosti, se jih pa lahko v grobem razdeli na generacije, ki jih ločijo večji preskoki v razumevanju mehanizmov in zmogljivosti materialov. Njihove polprevodniške lastnosti se lahko do neke mere izboljša z dopiranjem; nadzorovanim uvajanjem atomov drugih elementov v strukturo čistega polprevodnika. V tem diplomskem delu sem opisal teoretično podlago teh materialov s posebnim poudarkom na konceptu polprevodnosti. Podrobneje sem predstavil tudi postopek dopiranja in pa pridobivanje silicijevega monokristala, ker sem bil mnenja, da ti temi še posebej izstopata po svojem pomenu za polprevodniško industrijo. Nazadnje sem na podlagi literature opisal razvoj materialov in predstavil najnovejše napredke na področju inženiringa polprevodnikov.

Keywords

principi delovanja;nosilci naboja;dopiranje;prepovedani pas;diplomska dela;

Data

Language: Slovenian
Year of publishing:
Typology: 2.11 - Undergraduate Thesis
Organization: UL FKKT - Faculty of Chemistry and Chemical Technology
Publisher: [F. Bačič]
UDC: 621.315.5(043.2)
COBISS: 247682051 Link will open in a new window
Views: 31
Downloads: 7
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Other data

Secondary language: English
Secondary title: Semiconductor materials
Secondary abstract: Semiconductor materials are currently one of the most important material classes, for they are regarded as the cornerstone of all modern electronics. What makes them so special, is their ability to selectively conduct electric current, depending on the applied voltage or temperature. After a century of innovation, there is a multitude of known materials, which can be roughly divided into generations. A new generation is understood to include materials of far greater sophistication in terms of semiconducting capabilities, than the last. Semiconducting capabilities can be, to a certain extent, improved by doping, which is controlled introduction of other elements’ atoms into the structure of a pure semiconductor. In this work I have described the underlying theory of semiconductor materials with special emphasis on the concept of semiconductivity. Additionally, I provided a detailed description of doping process as well as the methods used in production of silicon monocrystal. My reasoning was, that those topics are of special importance for understanding the semiconductor industry. Lastly, I have, after reviewing the relevant literature, described materials’ development and presented the recent advances in the field of semiconductor engineering.
Secondary keywords: semiconductors;charge carriers;doping;band gap;Polprevodniki;Materiali;Univerzitetna in visokošolska dela;
Type (COBISS): Bachelor thesis/paper
Study programme: 1000372
Thesis comment: Univ. v Ljubljani, Fak. za kemijo in kemijsko tehnologijo, UNI Kemijsko inženirstvo
Pages: 1 spletni vir (1 datoteka PDF (36 str.))
ID: 27255510