Tim Leydecker (Author), Martin Herder (Author), Egon Pavlica (Author), Gvido Bratina (Author), Stefan Hecht (Author), Emanuele Orgiu (Author), Paolo Samorì (Author)

Abstract

Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blendTim Leydecker1, Martin Herder2, Egon Pavlica3,GvidoBratina3,StefanHecht2*, Emanuele Orgiu1*and Paolo Samorì1*Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logiccircuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organicmemories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well asthe number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-filmtransistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromicdiarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bitstorage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses.We also report robustness over 70 write–erase cycles and non-volatility exceeding 500 days. The device was implementedon a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics andsmart nanodevices.

Keywords

organic semiconductors;time of flight;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 53
COBISS: 4405243 Link will open in a new window
ISSN: 1748-3387
Parent publication: Nature nanotechnology
Views: 4812
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Other data

URN: URN:SI:UNG
Type (COBISS): Not categorized
Pages: str. 769-775
Volume: ǂVol. ǂ11
Issue: ǂno. ǂ9
Chronology: Sep. 2016
DOI: 10.1038/NNANO.2016.87
ID: 9151623