Tim Leydecker (Avtor), Martin Herder (Avtor), Egon Pavlica (Avtor), Gvido Bratina (Avtor), Stefan Hecht (Avtor), Emanuele Orgiu (Avtor), Paolo Samorì (Avtor)

Povzetek

Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blendTim Leydecker1, Martin Herder2, Egon Pavlica3,GvidoBratina3,StefanHecht2*, Emanuele Orgiu1*and Paolo Samorì1*Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logiccircuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organicmemories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well asthe number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-filmtransistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromicdiarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bitstorage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses.We also report robustness over 70 write–erase cycles and non-volatility exceeding 500 days. The device was implementedon a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics andsmart nanodevices.

Ključne besede

organic semiconductors;time of flight;

Podatki

Jezik: Angleški jezik
Leto izida:
Tipologija: 1.01 - Izvirni znanstveni članek
Organizacija: UNG - Univerza v Novi Gorici
UDK: 53
COBISS: 4405243 Povezava se bo odprla v novem oknu
ISSN: 1748-3387
Matična publikacija: Nature nanotechnology
Št. ogledov: 4812
Št. prenosov: 0
Ocena: 0 (0 glasov)
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Ostali podatki

URN: URN:SI:UNG
Vrsta dela (COBISS): Delo ni kategorizirano
Strani: str. 769-775
Letnik: ǂVol. ǂ11
Zvezek: ǂno. ǂ9
Čas izdaje: Sep. 2016
DOI: 10.1038/NNANO.2016.87
ID: 9151623