Sapana Ranwa (Author), Surendra Singh Barala (Author), Mattia Fanetti (Author), Mahesh Kumar (Author)

Abstract

We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. © 2016 IOP Publishing Ltd.

Keywords

ZnO nanorods;nanorods;gamma irradiation;sensors;

Data

Language: English
Year of publishing:
Typology: 1.01 - Original Scientific Article
Organization: UNG - University of Nova Gorica
UDC: 620.3
COBISS: 4632571 Link will open in a new window
ISSN: 0957-4484
Views: 3462
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Other data

URN: URN:SI:UNG
Type (COBISS): Not categorized
Pages: str. 1-8
Volume: ǂVol. ǂ27
Issue: ǂno. ǂ34
Chronology: 2016
DOI: 10.1088/0957-4484/27/34/345502
ID: 9248669