Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor

Sapana Ranwa (Avtor), Surendra Singh Barala (Avtor), Mattia Fanetti (Avtor), Mahesh Kumar (Avtor)

Povzetek

We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. © 2016 IOP Publishing Ltd.

Ključne besede

ZnO nanorods;nanorods;gamma irradiation;sensors;

Podatki

Jezik:	Angleški jezik
Leto izida:	2016
Tipologija:	1.01 - Izvirni znanstveni članek
Organizacija:	UNG - Univerza v Novi Gorici
UDK:	620.3
COBISS:	4632571
ISSN:	0957-4484
Št. ogledov:	3462
Št. prenosov:	0
Ocena:	0 (0 glasov)
Metapodatki:

Ostali podatki

URN:	URN:SI:UNG
Vrsta dela (COBISS):	Delo ni kategorizirano
Strani:	str. 1-8
Letnik:	ǂVol. ǂ27
Zvezek:	ǂno. ǂ34
Čas izdaje:	2016
DOI:	10.1088/0957-4484/27/34/345502
ID:	9248669