Chemical (in)stability of interfaces between different metals and Bi[sub]2Se[sub]3 topological insulator

Katja Ferfolja (Avtor), Mattia Fanetti (Avtor), Sandra Gardonio (Avtor), Matjaž Valant (Avtor)

Povzetek

In recent years a classification of materials based on their topological order gained popularity due to the discovery of materials with special topological character – topological insulators (TI). TI have different band structure than regular insulators or conductors. They are characterized by a band gap in the bulk of the material, but at the surface they possess conductive topological surface states (TSS) that cross the Fermi level. TSS are a consequence of the non-trivial bulk band structure and have properties that differ from ordinary surface states. They are robust toward contamination and deformation of the surface. Additionally, they are also spin polarized, which means that an electron spin is locked to a crystal momentum and, therefore, backscattering during transport is suppressed [1]. Due to their specific properties the TI could be used in fields of spintronics, quantum computing and catalysis [2]. The investigation of the interfaces between metals and the TI has not been given much attention even though its characterization is interesting from fundamental physics and applicative point of view. (In)stability of the contacts with metal electrodes, in a form of a chemical reaction or diffusion, has to be taken into account since it can affect the transport properties of the material or increase the contact resistance. Our research is dedicated to the study of the metal/TI interfaces, in particular to Bi2Se3 with deposited metals that are relevant for electrical contacts (Au, Ag, Pt, Cr, Ti). The thermal and chemical stability of the interfaces are of fundamental importance for understanding the contact behavior, therefore, we focused our work to the characterization of these properties. The metal/TI interfaces are investigated mainly with an electron microscopy (SEM, TEM, STM), EDX microanalysis and XRD. Our previous studies showed that the interface between Bi2Se3, and Ag deposited either chemically or from a vapor phase, results in the formation of new phases already at room temperature [3]. On the contrary, Au deposited on the Bi2Se3 surface shows very limited reactivity and is stable at RT, but diffusion and coalescence of the metal are observed starting from 100 °C [4]. In this contribution, we will present further characterization on the evolution of the Ag/Bi2Se3 and Au/Bi2Se3 interfaces, show preliminary results about recently investigated systems (Pt/Bi2Se3, Ti/Bi2Se3) and compare the thermal and chemical stability of the systems under investigation.

Ključne besede

thermal lens spectrometry;photothermal beam deflection spectroscopy;dye remediation;photothermal technique;photocatalytic degradation;reactive blue 19;TiO2 modification;

Podatki

Jezik:	Angleški jezik
Leto izida:	2018
Tipologija:	1.12 - Objavljeni povzetek znanstvenega prispevka na konferenci
Organizacija:	UNG - Univerza v Novi Gorici
UDK:	54
COBISS:	73565187
Št. ogledov:	1476
Št. prenosov:	0
Ocena:	0 (0 glasov)
Metapodatki:

Ostali podatki

URN:	URN:SI:UNG
Strani:	Str. 1
ID:	13283810