Interface-controlled growth of organic semiconductors on graphene

Jinta Mathew (Avtor), Saim Emin (Avtor), Egon Pavlica (Avtor), Matjaž Valant (Avtor), Gvido Bratina (Avtor)

Povzetek

We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to π−π stacks of molecules, which are inclined for 43° relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p− type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG.

Ključne besede

atomic force microscopy;organic semiconductors;graphene;

Podatki

Jezik:	Angleški jezik
Leto izida:	2017
Tipologija:	1.01 - Izvirni znanstveni članek
Organizacija:	UNG - Univerza v Novi Gorici
UDK:	53
COBISS:	4780795
ISSN:	0039-6028
Št. ogledov:	4126
Št. prenosov:	0
Ocena:	0 (0 glasov)
Metapodatki:

Ostali podatki

URN:	URN:SI:UNG
Vrsta dela (COBISS):	Delo ni kategorizirano
Strani:	str. 16-20
Zvezek:	ǂVol. ǂ664
Čas izdaje:	2017
DOI:	10.1016/j.susc.2017.05.005
ID:	9631213