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Št. zadetkov: 3
Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Burcu Ozden, Chungman Yang, Fei Tong, Min P. Khanal, Vahid Mirkhani, Mobbassar Hassan Sk, Ayayi Claude Ahyi, Minseo Park
Izvirni znanstveni članek
Oznake: AlGaN/GaN;high electron mobility transistor;spectroscopic measurements;photocurrent-voltage;ultraviolet light;photoelectric conversions;
Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Leto: 2014 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Simulation of the refractive index of Ga doped ZnO nanoparticles embedded in PEDOT
Vahid Mirkhani, Fei Tong, Dewang Song, Yoonsung Chung, Burcu Ozden, Kosala Yapabandara, Michael Hamilton, Dong-Joo Kim, Halen Koo, Kyeong K. Lee, Minseo Park
Izvirni znanstveni članek
Oznake: effective medium approximation;refractive index;zinc oxide;
Simulation of the refractive index of Ga doped ZnO nanoparticles embedded in PEDOT:PSS using effective medium approximations
Leto: 2016 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers
Fei Tong, Kosala Yapabandara, C.-W. Yang, Min P. Khanal, C. Jiao, M. Goforth, Burcu Ozden, Ayayi Claude Ahyi, M. Hamilton, G. Niu, D. A. Ewoldt, G. Chung, Minseo Park
Kratki znanstveni prispevek
Oznake: spectroscopic Photo-IV;AlGaN/GaN HEMT;
Spectroscopic Photo-IV Diagnostics of Nitride-based HEMT on Si Wafers
Leto: 2013 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Št. zadetkov: 3
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