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Effect of the nitrogen environment on indium gallium zinc oxide thin film transistors with low temperature ultraviolet annealing
Kunsik An, Yoon Jae Moon, Jun Young Kim, Joel Ndikumana, Kyung-Tae Kang
Izvirni znanstveni članek
Oznake: MEC;IGZO TFTs;low temperature;nitrogen annealing effect;oxide semiconductor;thin film transistor;
This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination. The aim is to understand how nitrogen flow rates impact the performance of solution-processed I ...
Leto: 2025 Vir: Repozitorij Univerze v Ljubljani (RUL)
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