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Št. zadetkov: 2
Growth of III-nitrides via sublimation and metalorganic vapor phase epitaxy
Robert F. Davis, C.M. Balkas, M.D. Bremser, O.H. Nam, W.G. Perry, B.L. Ward, Zlatko Sitar, T. Zheleva, L. Bergman, I.K. Shmagin, J.F. Muth, R.M. Kolbas, R.J. Nemanich
Izvirni znanstveni članek
Oznake: gallium nitride;aluminum nitraide;single crystals;thin films;photoluminiscence;Raman spectroscopy;chaatodoluminiscence;selective growth;lateral overgrowth;
Single crystals of GaN < 3 mm in length were grown by sublimation/recondensation of GaN in 760 Torr ▫$NH_3$▫ at 1100°C. Platelets of AlN < 1 mm thick were similarly grown between 1950 and 2250°C using an Al source. Monocrystalline GaN and ▫$Al_xGa_{1-x}N$▫(0001)(0.05 < x < 0.96) films were grown via ...
Leto: 1997 Vir: dLib.si Digitalna knjižnica Slovenije
The characterization of polymer thin films grown by plasma polymerization
John T. Grant, H. Jiang, K. O'Neill, K. Eyink, W.E. Johnson, E.M. Johnson, S. Tullis, D.W. Tomlin, P. Fleitz, Timothy J. Bunning
Izvirni znanstveni članek
Oznake: polymer films;plasma polymerization;chemical vapor deposition;benzene;octafluorocyclobutane;SEM;FTIR;VASE;XPS;
Plasmaženhanced chemical vapor deposition (PECVD) has been used to groww homo- polymerized films, co-polymerized films, and multi-layered films on a variety of substrates. The use of polymers as linear optical materials has growing, and organic materials offer several advantages over inorganic mater ...
Leto: 2004 Vir: dLib.si Digitalna knjižnica Slovenije
Št. zadetkov: 2
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