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Št. zadetkov: 2
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Yaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Ayayi Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A. Preble, Keith R. Evans
Izvirni znanstveni članek
Oznake: free-standing GaN substrate;ultra-low leakage;high breakdown Schottky diodes;
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Leto: 2011 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Yaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, Fei Tong, Patrick Gartland, Tamara Issacs-Smith, Ayayi Claude Ahyi, John Williams, Minseo Park, Ginger Wheeler, Mark Johnson, Andrew A. Allerman, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans
Kratki znanstveni prispevek
Oznake: GaN;rectifiers;
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Leto: 2011 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Št. zadetkov: 2
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