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Growth of III-nitrides via sublimation and metalorganic vapor phase epitaxy
Robert F. Davis, C.M. Balkas, M.D. Bremser, O.H. Nam, W.G. Perry, B.L. Ward, Zlatko Sitar, T. Zheleva, L. Bergman, I.K. Shmagin, J.F. Muth, R.M. Kolbas, R.J. Nemanich
Izvirni znanstveni članek
Oznake: gallium nitride;aluminum nitraide;single crystals;thin films;photoluminiscence;Raman spectroscopy;chaatodoluminiscence;selective growth;lateral overgrowth;
Single crystals of GaN < 3 mm in length were grown by sublimation/recondensation of GaN in 760 Torr ▫$NH_3$▫ at 1100°C. Platelets of AlN < 1 mm thick were similarly grown between 1950 and 2250°C using an Al source. Monocrystalline GaN and ▫$Al_xGa_{1-x}N$▫(0001)(0.05 < x < 0.96) films were grown via ...
Leto: 1997 Vir: dLib.si Digitalna knjižnica Slovenije
Št. zadetkov: 1
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