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Single crystals of GaN < 3 mm in length were grown by sublimation/recondensation of GaN in 760 Torr ▫$NH_3$▫ at 1100°C. Platelets of AlN < 1 mm thick were similarly grown between 1950 and 2250°C using an Al source. Monocrystalline GaN and ▫$Al_xGa_{1-x}N$▫(0001)(0.05 < x < 0.96) films were grown via ...