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Št. zadetkov: 4
Signal propagation in complex networks
Peng Ji, Jiachen Ye, Yu Mu, Wei Lin, Yang Tian, Chittaranjan Hens, Matjaž Perc, Yang Tang, Jie Sun, Jürgen Kurths
Pregledni znanstveni članek
Oznake: propagacija signalov;kompleksno omrežje;nelinearna dinamika;ne zaključna dela;signal propagation;complex networks;nonlinear dynamic;
Signal propagation in complex networks drives epidemics, is responsible for information going viral, promotes trust and facilitates moral behavior in social groups, enables the development of misinformation detection algorithms, and it is the main pillar supporting the fascinating cognitive abilitie ...
Leto: 2023 Vir: Fakulteta za naravoslovje in matematiko (UM FNM)
A Joint Topic and Perspective Model for Ideological Discourse
Wei-Hao Lin , Eric P. Xing , Alexander Hauptmann
Video in druga učna gradiva
Oznake:
Polarizing discussions on political and social issues are common in mass and user-generated media. However, computer-based understanding of ideological discourse has been considered too difficult to undertake. In this paper we propose a statistical model for ideology discourse. By ideology we mean ` ...
Leto: 2008 Vir: videolectures.net
Poster Spotlights
Dong Guo , Li Zhang , Wei Zhang , Yuzhen Niu , Gordon Wetzstein , Samuel Hasinoff , Jiaya Jia , Matthias Grundmann , Yiqun Hu , Lin Wu , Regis Perrier , Amit Agrawal , Stefan Harmeling , Eli Shechtman
Video in druga učna gradiva
Oznake: computer science;computer vision;computational photography
Leto: 2010 Vir: videolectures.net
Plasma-enhanced atomic layer deposition of amorphous Ga[sub]2O[sub]3 for solar-blind photodetection
Zeyu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, N. Pastukhova, Matjaž Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng
Izvirni znanstveni članek
Oznake: amorphous gallium oxide;passivation layer;plasma enhanced atomic layer deposition;responsivity;solar-blind photodetector;
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integ ...
Leto: 2022 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Št. zadetkov: 4
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