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Št. zadetkov: 4
Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
Resham Thapa, Siddharth Alur, Kyusang Kim, Fei Tong, Yogesh Sharma, Moonil Kim, Ayayi Claude Ahyi, Jing Dai, Jong Wook Hong, Michael Bozack, John Williams, Ahjeong Son, Amir Dabiran, Minseo Park
Izvirni znanstveni članek
Oznake: AlGaN/GaN HEMT;DNA hybridization detection;
Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
Leto: 2012 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Yaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Ayayi Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A. Preble, Keith R. Evans
Izvirni znanstveni članek
Oznake: free-standing GaN substrate;ultra-low leakage;high breakdown Schottky diodes;
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Leto: 2011 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Growth of ZnO nanorod arrays on flexible substrates
Fei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, Ayayi Claude Ahyi, Tamara Issacs-Smith, John Williams, Hosang Ahn, Hyejin Park, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, Minseo Park
Izvirni znanstveni članek
Oznake: ZnO nanorod arrays;ITO-PET;solution growth;
Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration
Leto: 2012 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Yaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, Fei Tong, Patrick Gartland, Tamara Issacs-Smith, Ayayi Claude Ahyi, John Williams, Minseo Park, Ginger Wheeler, Mark Johnson, Andrew A. Allerman, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans
Kratki znanstveni prispevek
Oznake: GaN;rectifiers;
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Leto: 2011 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Št. zadetkov: 4
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