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Št. zadetkov: 5
Izvirni znanstveni članek
Oznake: carrier selective layers;Cu-doped nickel oxide;electron-beam evaporation;perovskite solar cells;W-doped niobium oxide;
Inorganic carrier selective layers (CSLs), whose conductivity can be effectively tuned by doping, offer low-cost and stable alternatives for their organic counterparts in perovskite solar cells (PSCs). Herein, we employ a dual-source electron-beam co-evaporation method for the controlled deposition ...
Leto: 2022 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Izvirni znanstveni članek
Oznake: chemistry;electrocatalysis;seawater oxidation;oxygen evolution reaction;
Direct seawater electrolysis is key to massive hydrogen fuel production without the depletion of precious freshwater resources and the need for high-purity electrolytes. However, the presence of high-concentration chloride ions (Cl−) and alkaline-earth metal ions (Mg2+, Ca2+) poses great challenges ...
Leto: 2023 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Izvirni znanstveni članek
Oznake: photocatalysis;renewable energy;
Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta3N5 thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top inter ...
Leto: 2022 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Izvirni znanstveni članek
Oznake: alumina;defect passivation;interface engineering;photoelectrochemical water splitting;
In the emerging Sb2S3‐based solar energy conversion devices, a CdS buffer layer prepared by chemical bath deposition is commonly used to improve the separation of photogenerated electron‐hole pairs. However, the cation diffusion at the Sb2S3/CdS interface induces detrimental defects but is often ove ...
Leto: 2024 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Izvirni znanstveni članek
Oznake: amorphous gallium oxide;passivation layer;plasma enhanced atomic layer deposition;responsivity;solar-blind photodetector;
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integ ...
Leto: 2022 Vir: Repozitorij Univerze v Novi Gorici (RUNG)
Št. zadetkov: 5
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