Plasma-enhanced atomic layer deposition of amorphous Ga[sub]2O[sub]3 for solar-blind photodetection
Abstract
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Keywords
amorphous gallium oxide;passivation layer;plasma enhanced atomic layer deposition;responsivity;solar-blind photodetector;
Data
| Language: | English |
|---|---|
| Year of publishing: | 2022 |
| Typology: | 1.01 - Original Scientific Article |
| Organization: | UNG - University of Nova Gorica |
| UDC: | 53 |
| COBISS: |
126949891
|
| ISSN: | 1674-862X |
| Views: | 423 |
| Downloads: | 0 |
| Average score: | 0 (0 votes) |
| Metadata: |
|
Other data
| URN: | URN:SI:UNG |
|---|---|
| Type (COBISS): | Not categorized |
| Pages: | str. 1-11 |
| Volume: | ǂVol. ǂ20 |
| Issue: | ǂiss. ǂ4 |
| Chronology: | Dec. 2022 |
| DOI: | 10.1016/j.jnlest.2022.100176 |
| ID: | 16865768 |
Recommended works:
Plasma-enhanced atomic layer deposition of amorphous Ga[sub]2O[sub]3 for solar-blind photodetection
2022,
no subtitle data available
Atomic layer deposition for the photoelectrochemical applications
2021,
no subtitle data available
Bi[sub]2Ti[sub]2O[sub]7-based pyrochlore nanoparticles and their superior photocatalytic activity under visible light
2018,
no subtitle data available
Vers une connaissance microscopique de la structure de verres de phosphate P[sub]2O[sub]5
2020,
no subtitle data available
v-P[sub]2O[sub]5 "micro-clusters" in P-doped silica studied by a first principles Raman investigation
2019,
no subtitle data available