Plasma-enhanced atomic layer deposition of amorphous Ga[sub]2O[sub]3 for solar-blind photodetection
Povzetek
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Ključne besede
amorphous gallium oxide;passivation layer;plasma enhanced atomic layer deposition;responsivity;solar-blind photodetector;
Podatki
| Jezik: | Angleški jezik |
|---|---|
| Leto izida: | 2022 |
| Tipologija: | 1.01 - Izvirni znanstveni članek |
| Organizacija: | UNG - Univerza v Novi Gorici |
| UDK: | 53 |
| COBISS: |
126949891
|
| ISSN: | 1674-862X |
| Št. ogledov: | 423 |
| Št. prenosov: | 0 |
| Ocena: | 0 (0 glasov) |
| Metapodatki: |
|
Ostali podatki
| URN: | URN:SI:UNG |
|---|---|
| Vrsta dela (COBISS): | Delo ni kategorizirano |
| Strani: | str. 1-11 |
| Letnik: | ǂVol. ǂ20 |
| Zvezek: | ǂiss. ǂ4 |
| Čas izdaje: | Dec. 2022 |
| DOI: | 10.1016/j.jnlest.2022.100176 |
| ID: | 16865768 |
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